Abstract: This work presents a 180nm BCD technology platform with 1.8V/5V CMOS, BJT, 8-65V isolated LDMOS (Lateral Double-Diffused MOSFET) and other devices such as diodes, resistors, capacitors etc., ...
Abstract: We present a new BCD technology in a 0.18 μm technology platforms with a capability of 7 to 60V high-voltage devices such as DEMOS and LDMOS. The developed 0.18 mum BCD process provides ...
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