Engine temperatures climb fast whenever you drive, idle in traffic, or run the air conditioning, and your cooling fan quietly ...
Abstract: Silicon carbide (SiC) power devices offer high switching speeds and power densities but are constrained by significant parasitic inductance and limited thermal dissipation capability.
Abstract: Lateral gallium nitride (GaN) high-electronmobility transistors (HEMTs) offer notable advantages over traditional silicon (Si) and silicon carbide (SiC) devices, including faster switching ...